HGTG 20N60A4D N-CH IGBT d 600V 40A 290W

Scheda Tecnica

Articolo: HGTG20N60A4D

Descrizione: IGBT Isulated gate bipolar SMPS transistor integrated hyperfast (iperfast) recovery diode

Polarità: N-CHANNEL (N-FET)

Tensione Drain-Source: 600v

Corrente: 40A

Dissipazione: 290W

Contenitore: TO247 TO-247

Pinning: 1: Gate 2: Collector 3: Emitter

Articolosimilare: G20N60A4D G20N60A4D - BT40T60ANF

Tempo: 140ns

Marking:

Produttore: FAIRCHILD

Applicazioni / Application:This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.

Nota informativa: I dati presenti in questa scheda sono solo indicativi.
Per informazioni piu precise consultare i dati del produttore.
TheseScheda Tecnica are indicative only, for more precise information look in the data producer.

RoHS: