20N120IHL N-IGBT/D 1200V 40A 192W TO-247

Scheda Tecnica

Articolo: NGTB20N120IHLWG

Descrizione: Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss.
Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.

Tensione: 1200 V

Corrente: 40 A

Dissipazione: 192 W

Contenitore: TO-247

Articolo similare: H2100-2 - 400R21 - 40QR21

Marking: 20N120IHL

Produttore: ON

Applicazioni / Application: FORNELLO / PIANO PIASTRA AD INDUZIONE
Inductive Heating
Consumer Appliances
Soft Switching

Nota informativa: I dati presenti in questa scheda sono solo indicativi.

Per informazioni piu precise consultare i dati del produttore.

These Scheda Tecnica are indicative only, for more precise information look in the data producer.

RoHS: