FDA 59N25 N-MOS d 250V 59A TO3P

Scheda Tecnica

Articolo: FDA 18N50

Descrizione: N-CHANNEL MOSFET transistor integrated diode
N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance,and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Polarità: N-CHANNEL

Tensione Drain-Source: 250V

Corrente: 35A

Dissipazione:

RDS: 0,049oHM 0R049 0,049R

Contenitore: TO-3P

Pinning: 1: Gate 2: Drain 3: Source

Articolo in sostituzione:

Tempo:

Marking: FDA 59N25

Produttore:

Applicazioni / Application:

Nota informativa: I dati presenti in questa scheda sono solo indicativi.
Per informazioni piu precise consultare i dati del produttore.
TheseScheda Tecnica are indicative only, for more precise information look in the data producer.

RoHS: