Scheda Tecnica
Articolo: IRFP 460 LC
Descrizione: N-Channel HEXFET POWER MOSFET integrated zener diode
These device
improvements combined with the proven ruggedness and reliability of HEXFETs
offer the designer a new standard in power transistors for switching applications.
Polarità: N-CHANNEL (N-FET)
Tensione Drain-Source: 500V
Corrente: 20A
Dissipazione: 280W
Drin to Source On-Resistance: RDS/on 0,22 oHM 0,27HM 0R27- 0,27R
Contenitore: TO247AC TO-247AC
Pinning: 1: Gate 2: Drain 3: Source
Articolo in sostituzione:
Marking: IRFP460LC
Produttore: Infineon
Applicazioni / Application:Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V Vgs Rating
Reduced Ciss, Coss, Crss
Isolated Central Mounting Hole
Dynamic dv/dt Rated
Repetitive Avalanche Rated
Nota informativa: I dati presenti in questa scheda sono solo indicativi.
Per informazioni piu precise consultare i dati del produttore.
TheseScheda Tecnica are indicative only, for more precise information look in the data producer.
RoHS: